Monomode optical waveguide in lithium niobate formed by mev. Optical polished 0001 single crystals of sapphire, 10 10 0. Ion implantation and ion mixing have made possible the production of new materials having new properties and new phases or structures. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Ion, implantation permits introduction of the dopant in silicon that is controllable, reproducible and free from undesirable side effects. Due to the damaging of diamond lattice by ion implantation, thermal annealing at high temperature. The advantages and limitations of ion imlantation are also pointed out. Effects of hydrogen ion implantation and thermal annealing on.
We report on the optical properties of znwo4 planar waveguides created by ion implantation, and the effect annealing has on these structures. Pdf analytical techniques for ion implantation2018 researchgate. The effects of implantation of argon on the optical properties of gap films and bulk have been investigated for doses of 10 to 10 15 cm 2 and energies between 1. Pdf ion implants result in structural, electronic, and chemical.
Optical and structural effects of ion implantation in polymer. Ion implantation effects ion implantation in layers of semiconductor material is an important process where equation 2 may be very useful for assessing the effect on the implantation. Osa optical properties of planar waveguides on znwo4. The ions can alter the elemental composition of the target if the. Aug 19, 2006 sio x layers with continuous depth profiles of the oxygen concentration are formed about 2. The dose is accurately measured during implantation giving outstanding control and repeatability. We are a community of more than 103,000 authors and editors from 3,291 institutions spanning 160 countries, including nobel prize winners and some of the worlds mostcited researchers. The monomode enhancedindex linbo 3 waveguide fabricated by lowdose ion implantation is reported. Ion implantation presents a continuously evolving technology. Over the past few years, ion implantation has been developed into a very powerful tool for ic fabrication. The ions loose kinetic energy, thus, slowing to a stop, by 2 mechanisms. In absorption spectra obtained from the implanted samples, growth of an fcenter band at 5. Effects of irradiation temperature and dose rate on the.
Ion implantation influences surface properties of all types of material, whether they be metal, semiconductor or insulator. Ion implantation equipment consists of an ion source to produce ions of the desired element, an accelerator to accelerate the ions to a high energy, and a target chamber. Typically, the optical properties modification of material by implantation strongly depends on the chemical bonding in the matrix. Osa optical properties of planar waveguides on znwo4 formed.
Four dark modes were observed for extraordinary light at 633 nm, while. Pdf effects of phosphorus doping by plasma immersion ion. Ion implantation systems comprise four major components figure 2. Chapter 6 ion implantation universiti tunku abdul rahman. Electric field drag created by positive ion moving in a flood of electrons nuclear. Ion synthesis of metal nanoparticles ion implantation is an effective tool for introducing single impurities into the surface layer to a depth of several micrometers 8. Osa monomode optical waveguide excited at 1540 nm in. Oct 21, 2003 the effects of implantation of argon on the optical properties of gap films and bulk have been investigated for doses of 10 to 10 15 cm 2 and energies between 1. Effect of iron ion implantation dose on optical and. The samples were kept at room temperature with a circulation of cooling water during ion implantation. Reliable information about the coronavirus covid19 is available from the world health organization current situation, international travel. The depth distribution of the changed optical properties is revealed by highresolution reflection and transmission profiles measured across the beveled surface of the irradiated samples. Pdf effect of nitrogen ion implantation on the optical. Ion implantation page 6 introduction ion implant is used to put specific amounts of ntype and ptype dopants dose into a semiconductor.
The nonlinear optical properties of such colloids, in particular the enhancement of optical kerr susceptibility by both dielectric and quantumconfinement effects, suggest that the ion implantation technique may play an important role for the. Pdf optical effects in silica glass during implantation. Fe and fe3o4 precipitates formed in yttriumstabilized zro2 by ion implantation and annealing article pdf available in applied physics letters 775. Concentration and annealing effects on luminescence.
Singh1 1department of physics, indian institute of technology delhi, hauz khas, new delhi 2max planck institute of microstructure physics, halle 1india 2germany 1. Chapter 9 nitridation of gaas surface by low energy ion implantation. Ionimplantation enables the production of radiation damage within a matter of hours to doses equivalent to several years in modern nuclear power technologies. Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and a target chamber, where the ions impinge on a target, which is the material to be implanted. The combination of these features in an allimplanted design gives a switching device which can be fabricated with a thicker. Ions are imbedded into the wafer and are scattered at random angles. Christofides, transmission and reflection spectoscopy on ion implanted semiconductors a. Thus the investigations are extended to ion implantation into silica layers, mainly on. The development of optoelectronic or even photonic devices based on silicon technology is still a great challenge. Planar optical waveguides in znwo4 crystals are fabricated by 5. Design of ionimplanted mosfets with very small physical. Xcut linbo3 crystals were implanted at room temperature by 6.
Implantationinduced damage decreases the implanted volume in fused silica with consequent changes in the refractive index, the near. Pdf optical effects in silica glass during implantation of. Pdf effects of low energy h ion implantation on the. We report here synthesis and subsequent nitrogen ion implantation of indium oxide in2o3 thin films. Effects of hydrogen ion implantation and thermal annealing. Optical effects of ion implantation book, 1994 worldcat. Optical properties and structure characterization of sapphire. Ion implantation in polymeric materials has recently attracted considerable attention in various technology and science fields. The monomode enhancedindex linbo3 waveguide excited at 1540 nm is reported. Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of zn0. Improvements in equipment, understanding of beamsolid interactions, applications to new materials, improved characterization techniques, and more recent.
Structural changes of the polymer were studied with raman spectroscopy to ensure the. Optical effects of ion implantation 457 a has an index only slightly less than that of the unimplanted region c. Though radiation damage is often considered as an undesirable consequence but in this case presence of fe has modified the optical properties without effecting the crystallographic orientation of cds nanowires. Structural changes of the polymer were studied with. The optical density spectra taken of these composites demonstrate that the silver nanoparticles exhibit unusually weak plasma resonance. Thus the investigations are extended to ion implantation into silica layers. The ion beam current density was controlled at 5or10a. Optical and photothermal characterization, volume 46 1st edition. Specific regions can be implanted using a variety of masking materials including photoresist. Structural change induced in laalotext removed by ion. Conventional beamline ion implantation is a line of sight process in which ions are extracted from an ion source, accelerated to high energy, and then bombard the workpiece. Synthesized cds nanowires were implanted with fe ions at different doses ranging from e14 to 5e16 using low energy ion beam.
Survey of the literature regarding implantation on optical. The nonlinear optical properties of such colloids, in particular the enhancement of optical kerr susceptibility by both dielectric and quantumconfinement effects, suggest that the ion implantation technique may play an important role for the production of all optical switching devices. Optical waveguides fabricated by ion implantationirradiation. Effect of nitrogen ion implantation on the structural and. Effects of hydrogen ion implantation and thermal annealing on structural and optical properties of singlecrystal sapphire. Introduction ion implantation is considered to be a precise technology for the dopant introduction not. Ion implantationinduced layer splitting of semiconductors 393 ge, gate length of the ssige based cmos devices and bandgap in base region of the sige heterojunction bipolar transistors hbts varies accordingly which gives its importance in the said applications. Ion implantation in layers of semiconductor material is an important process where equation 2 may be very useful for assessing the effect on the implantation if dopants are introduced by ion implantation, for instance in silicon, the tetrahedral radius of the dopant r d differs from that. The effects of ion implantation through very thin silicon. Silicon and its oxide do not possess direct optical transitions and, therefore, are not luminescent. The damage increases with the dose more ions produce more damage. Optical properties of metal nanoparticles synthesized in a.
This accelerated rate of irradiation is widely considered an advantage for research into the effects of radiation on microstructure and. Erbium luminescence centres in single and nanocrystalline. Spratt, mengbing huang, chuanlei jia, lei wang, vimal k. Amorphization by ion implantation and subsequent defect annealing can easily be studied by rbs. The techniques and the necessary support equipment have been developed in the past six months.
Ion implantation is a lowtemperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Second, ion implantation allows the formation of very shallow source and drain regions which are more favorable with respect to shortchannel effects, while maintaining an acceptable sheet resistance. Since the introduction of ion implantation for semiconductor doping in the late. Energetic ions penetrate the surface of the wafer and then undergo a. Apr 16, 2001 the monomode enhancedindex linbo 3 waveguide fabricated by lowdose ion implantation is reported. Ion implantation w provides an alternative to the predep diffusion for. However, formatting rules can vary widely between applications and fields of interest or study. Thus, ion implantation was suggested as an approach to modify properties of insulating polymers, in particular, to turn them into semiconductors 2,3. Optical effects of ion implantation cambridge studies in. Effects of low energy h ion implantation on the optical properties of znmgo thin films.
The effects of ion implantation were studied using optical absorption spectroscopy, rutherford backscattering spectroscopy and ion channeling rbsc and transmission electron microscopy tem. Structural changes can be inferred from ir measurements near cm. Our work consists in the study of ion implantation effects on the linear and nonlinear optical properties of polymer thin films. Beginning with an overview of the basic physics and practical methods involved in ion implantation, the topics of optical absorption and luminescence are then discussed. One major property which can be controlled is the refractive index. Monomode optical waveguide in lithium niobate formed by. A side effect of ion implantation is the radiation damage that results from. Four dark modes were observed for extraordinary light at 633 nm, while only one enhancedindex mode was. It is expected to remain as the mean for doping technique for the foreseeable future. Some, such as chemical reactivity, can increase a thousandfold, others such as birefringence, electrooptic and acoustic wave parameters are reduced. Othonos, photoluminescence and raman scattering of ion implanted semiconductors.
Cambridge core condensed matter physics, nanoscience and mesoscopic physics optical effects of ion implantation by p. The remaining weak light emission is based on intrinsic and extrinsic defect luminescence. Ion implantationinduced layer splitting of semiconductors. If dopants are introduced by ion implantation, for instance in silicon, the tetrahedral radius of the dopant r d differs from that of the substrate and. Optical properties and structure characterization of. The ion implantationinduced properties of onedimensional.
Ion implantation can be used to introduce network damage and to alter the chemical composition in glasses. This project started with developing god quality planar waveguides based on a wellknown photoconductor polymer, the polyvinylcabazole. Numerous and frequentlyupdated resource results are available from this search. Contrarily to the implantation of conventional semiconductors aiming in doping, the idea of ion bombardment of polymers lies in a. In section iv, we reduce two ion implantation steps without affecting the performance of. Effect of nitrogen ion implantation on the structural and optical properties of indium oxide thin films. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research.
Sio x layers with continuous depth profiles of the oxygen concentration are formed about 2. After annealing, the waveguides were formed by the extraordinary refractive index enhancement in the waveguide regions. Osa monomode optical waveguide excited at 1540 nm in linbo3. However, postimplant annealing step 900oc is required to anneal out defects. Optical and structural effects of ion implantation in. Oclcs webjunction has pulled together information and resources to assist library staff as they consider how to handle.
Introduction a description of the techniques of ion implantation and the equipment utilized is given in this section. Improvements in equipment, understanding of beamsolid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for. Thus, the maximum damage roughly corresponds with the ion range, r p. Dec 21, 2019 ion implantation in polymeric materials has recently attracted considerable attention in various technology and science fields. Ion implantation is widely used as a means of introducing radiation damage in materials. Ion channeling is another effect which may be important while implanting ions into. Low loss planar optical waveguides were obtained and characterized by the prism coupling technique. Plaksin and others published optical effects in silica glass during implantation of 60kev cusup ions find, read and cite. Plaksin and others published optical effects in silica glass during implantation of 60kev cusup ions find, read and cite all the research you need on researchgate. A chapter on waveguide analysis then provides the background for a description of particular optical devices, such as waveguide lasers, mirrors, and novel nonlinear materials. Consequently, ion implantation has developed into a well established technique for the modification of surface layers with an extensive literature which covers the interaction of an incident ion beam on, and beneath, the surface of a solid target.
Pdf ion implantation for semiconductor doping and materials. Implantation of ordered films and bulk gap results in a marked change in the optical absorption edge from about 2. Ion beam insulator ion source disk wafers target holder disk wafer load and unload area 100kv power supply source, magnet, power supply figure 8. Ion implantation enables the production of radiation damage within a matter of hours to doses equivalent to several years in modern nuclear power technologies. Purchase effect of disorder and defects in ionimplanted semiconductors.
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